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[Alpha Biz=(Chicago) Reporter Kim Jisun] According to industry sources on the 30th, Samsung Electronics and Micron, the top three global DRAM companies, are all preparing for mass production as they complete the development of fifth-generation HBM3E and start supplying samples. HBM is a high-performance memory that dramatically increases data processing speed by connecting several DRAMs vertically.
Recently, the demand for HBM in the field of artificial intelligence has been increasing rapidly. Following the first-generation HBM, the second-generation HBM2, third-generation HBM2E, fourth-generation HBM3, fifth-generation HBM3E and sixth-generation HBM4 will be developed in order. Currently, fourth-generation HBM3 products are being mass-produced.
SK Hynix, a step ahead of the HBM market, succeeded in developing HBM3E and began supplying samples to its client NVIDIA for verification procedures. The newly developed HBM3E processes up to 1.15TB of data per second. It processes more than 230 full-HD movies in one second.
SK Hynix plans to mass-produce HBM3E from the first half of next year and solidify its unique position in the artificial intelligence memory market.
Samsung Electronics introduced its ultra-high-performance HBM3E DRAM 'Shinbolt' for the first time at the 'Memory Tech Day' event held in Silicon Valley on the 20th. Shinebolt has a capacity of 1.5 times that of its predecessor, and can handle up to 1.2TB of data per second. Power efficiency has been improved by 10 percent.
Samsung Electronics is also delivering HBM3E samples to customers. Although it did not disclose the schedule for mass production, it is highly likely that mass production will begin in the second half of next year.
Micron has also entered the competition. Micron has developed a fifth-generation HBM3 Zen2 memory and has begun verifying samples from its customers.
Alphabiz Reporter Kim Jisun(stockmk2020@alphabiz.co.kr)
