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(Photo= Yonhap news) |
[Alpha Biz= Reporter Cha Hye Young] Samsung Electronics has finalized plans to begin mass production of the world’s first NAND flash memory with over 400 layers, slated for the second half of next year.
According to information compiled by Alpha Biz on the 1st, Samsung will incorporate next-generation packaging technologies, including hybrid bonding, in the upcoming V10 NAND flash, expected to be released in the latter half of 2024.
The V10 NAND flash, set for mass production next year, will utilize 'Wafer-to-Wafer (W2W)' technology, a method within hybrid bonding that involves bonding wafers directly together.
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Samsung Electronics |
An industry insider familiar with Samsung's internal operations stated, "Tokyo Electron and other partners are expected to assist in the mass production of the V10 NAND flash. Samsung plans to secure a leading position with the world’s first 400-layer product through V10 starting next year."
Hybrid bonding involves creating cells and peripheral circuits on separate wafers, which are then bonded together to produce ultra-high-density NAND flash memory. This method allows Samsung to stack over 400 layers of memory cells while manufacturing the peripheral wafer separately, enabling a stable increase in the number of layers.
Samsung Electronics has declined to comment on these developments, stating, "We have not disclosed any such plans; this is merely industry speculation."
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